Prof. Mathieu Luisier reveals simulation of the ideal size of future computer memories
Ultraprecise simulation of a computer storage technology known as CBRAM reveals its optimal geometry: an insulator roughly ten atoms thick sandwiched between two electrodes. CBRAM (conductive bridging random access memory) could play a fundamental role in memory in the future by storing data in a non-volatile (i.e., near-permanent) way. Prof. Mathieu Luisier and his team studied this type of memory, which consists of two metal electrodes separated by an insulator.
The researchers developed a computer model of a CBRAM that consists of some 4500 atoms and obeys the laws of quantum mechanics governing the microscopic world. This atomic-scale simulation makes it possible to precisely describe the intensity of the current generated by a metallic nanofilament as it forms and dissolves between the electrodes.
The findings of their research were presented at the IEDM conference in San Francisco in December 2017.
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